In the precision-driven world of semiconductor manufacturing, our ultra-pure Silicon Carbide abrasives deliver the exacting performance required for today's advanced microelectronic components. With nanometer-level precision and exceptional chemical purity, our SiC products support critical wafer processing operations from ingot slicing through final polishing.
Engineered specifically for semiconductor applications, our Silicon Carbide abrasives help manufacturers achieve higher yields, improved surface quality, and consistent results across high-volume production environments.
Our F400-F600 grade SiC abrasives provide optimal kerf width and surface quality during wire-saw slicing operations, reducing material waste while maintaining exceptional slice parallelism.
F600-F800 microgrit SiC abrasives ensure uniform material removal during lapping processes, establishing the foundation for superior wafer flatness with minimal subsurface damage.
Specialized SiC formulations prevent chipping and microcracks during edge profiling operations, critical for reducing wafer breakage in subsequent high-temperature processing steps.
Ultra-fine F1000-F1200 SiC delivers mirror finishes with roughness values below 1nm Ra, essential for defect-free photolithographic processes in advanced node production.
Our engineered SiC slurries support chemical-mechanical planarization with exceptional removal selectivity and reduced defectivity for multi-layer semiconductor structures.
Silicon carbide abrasives prepare specialty substrates like GaN and SiC wafers for epitaxial growth, ensuring optimal crystal orientation and surface chemistry.
Our semiconductor-grade SiC products adhere to the most demanding purity and particle size distribution requirements in the industry:
| Product Grade | SiC Purity | Particle Size Range | Major Impurities (ppm) | Recommended Applications |
|---|---|---|---|---|
| UltraPure-S | 99.9% | F800-F1200 | < 10 Fe, < 5 Al, < 3 Ca | Final wafer polishing, CMP processes |
| SemiGrade-X | 99.8% | F600-F1000 | < 15 Fe, < 8 Al, < 5 Ca | Intermediate lapping, edge profiling |
| WaferCut-Pro | 99.5% | F400-F600 | < 25 Fe, < 12 Al, < 8 Ca | Wire saw operations, rough lapping |
| NanoSiC | 99.95% | F1000-F1200 | < 5 Fe, < 3 Al, < 2 Ca | Ultra-precision finishing, advanced node CMP |
Our ultra-pure SiC formulations minimize surface and subsurface defects, reducing wafer rejection rates by up to 35% compared to conventional abrasives.
Achieve TTV (Total Thickness Variation) values as low as 0.5μm across 300mm wafers through optimized particle shape and size distribution.
Enhanced cutting efficiency shortens cycle times by 15-20%, increasing throughput without compromising surface quality.
Advanced purification processes eliminate contamination sources, resulting in fewer post-CMP defects and improved device performance.
Optimized hardness-to-friability ratio extends diamond wire and conditioning pad life by up to 30%, reducing consumable costs.
Stringent quality control ensures lot-to-lot consistency, eliminating process variations and enabling predictable manufacturing outcomes.
Our specialized semiconductor team provides comprehensive support throughout your implementation process:
Independent testing demonstrates the superior performance of our semiconductor-grade Silicon Carbide versus alternative abrasives:
| Performance Metric | Standard Al₂O₃ | Premium Al₂O₃ | Standard SiC | Our Semiconductor SiC |
|---|---|---|---|---|
| Material Removal Rate (μm/min) | 0.8-1.2 | 1.0-1.5 | 1.5-2.0 | 2.0-2.5 |
| Surface Roughness (Ra, nm) | 3.5-5.0 | 2.0-3.5 | 1.5-2.5 | 0.8-1.2 |
| Subsurface Damage Depth (μm) | 5.0-8.0 | 3.0-5.0 | 2.0-3.5 | 1.0-1.5 |
| Particle Embedment (count/cm²) | 80-120 | 50-70 | 30-50 | 10-25 |
| Wafer-to-Wafer Consistency (σ) | ±15% | ±10% | ±8% | ±3% |
| Metallic Contamination (ppm) | 50-100 | 25-50 | 15-25 | < 10 |
*Data based on third-party analysis by Semiconductor Materials Testing Laboratory using standardized 300mm silicon wafer processing conditions.
Client:Global semiconductor foundry implementing 5nm process technology
Challenge:Achieving ultra-flat wafer surfaces with minimal defectivity to support advanced lithography requirements while maintaining high throughput.
Solution:Implementation of our NanoSiC F1200 series with customized particle size distribution and specialized slurry formulation for their CMP process.
Results:
Access our comprehensive library of technical resources for semiconductor applications:
While diamond abrasives offer superior hardness (10 Mohs vs. 9.5 for SiC), our silicon carbide provides several distinct advantages for semiconductor manufacturing: lower cost-per-wafer, reduced risk of surface contamination, better control of particle size distribution, and superior chemical compatibility with wet processing environments. SiC's controlled friability creates fresh cutting edges during use, resulting in more consistent material removal rates across large wafer surfaces. For most semiconductor applications except ultimate-finish polishing, our specialized SiC formulations deliver superior cost-performance than diamond abrasives while maintaining the surface integrity requirements of advanced node processing.
Our semiconductor-grade SiC undergoes a rigorous multi-stage quality control protocol to ensure exceptional consistency: (1) Raw material pre-screening using XRF and ICP-MS analysis; (2) In-process particle monitoring with laser diffraction and image analysis; (3) Statistical process control with 100% lot sampling; (4) Certified third-party verification of chemical purity; (5) Surface chemistry characterization; (6) Performance validation using standardized material removal testing; and (7) Comprehensive Certificate of Analysis documenting 15+critical parameters. Each production lot receives a unique traceability code allowing customers to access complete manufacturing history and analytical data, ensuring complete transparency and consistency for semiconductor manufacturing environments.
Yes, our semiconductor-grade SiC products are engineered for seamless integration with industry-standard equipment. Our formulations are compatible with major OEM platforms including Applied Materials, Ebara, LAM Research, and DISCO systems without requiring significant process modifications. The controlled particle shapes and narrow size distributions prevent clogging in slurry delivery systems and maintain consistent performance across extended manufacturing campaigns. Our technical team provides detailed implementation guidelines specific to your equipment configuration, including recommended carrier fluid specifications, flow rates, pad conditioning parameters, and post-CMP cleaning protocols. For specialized applications, we offer custom formulation services to optimize performance for proprietary equipment designs.
Our semiconductor materials specialists are available to discuss your specific processing challenges and recommend the optimal Silicon Carbide solution for your application. Contact us to schedule a technical consultation or request material samples for evaluation.
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